3-DIMENSIONAL PREDICTIONS OF SILICON DEPOSITION IN A BARREL TYPE CVD REACTOR

被引:15
作者
YANG, L [1 ]
FAROUK, B [1 ]
MAHAJAN, RL [1 ]
机构
[1] AT&T BELL LABS,ENGN RES CTR,PRINCETON,NJ 08540
关键词
D O I
10.1149/1.2221281
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Chemical vapor deposition (CVD) is a widely used process for the fabrication of thin solid films with applications in electronics, optics, and surface property modifications. Results from a three dimensional numerical model to predict silicon deposition characteristics in a cold wall 'barrel' type CVD reactor are presented. A simplified reactor geometry with a circular cylindrical susceptor is considered. Equations of conservation of mass, momentum, energy, and chemical species are numerically solved. Chemical reactions are allowed in the gas phase and on the heated susceptor. The effects of injection angle, susceptor, and wall temperatures, and the rotation speed of susceptor on silicon deposition rates are presented and discussed.
引用
收藏
页码:2666 / 2673
页数:8
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