HIGH-TEMPERATURE OPERATION OF STRAINED SI0.65GE0.35/SI(111) P-TYPE MULTIPLE-QUANTUM-WELL LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

被引：34

作者：

FUKATSU, S ^{[1
]}

USAMI, N ^{[1
]}

SHIRAKI, Y ^{[1
]}

NISHIDA, A ^{[1
]}

NAKAGAWA, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI,TOKYO 182,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence (EL) was observed at temperatures up to 60-degrees-C in p-type strained Si0.65Ge0.35/Si multiple-quantum-well (MQW) diode structures grown on Si (111) substrates by Si molecular-beam epitaxy. No-phonon line and its transverse optical phonon replica were well-resolved in the room-temperature EL spectrum for the first time. EL spectrum was dominated by a broad alloy band located below the band-edge state by almost-equal-to 100 meV at lower temperatures, which was taken over by clear band-edge emissions at elevated temperatures. The emission intensity of the alloy band exhibited a saturation behavior with increasing injection current while the band-edge emission was found to develop with a power exponent of 1.4.

引用

页码：967 / 969

页数：3

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