PALLADIUM-RELATED DEEP LEVELS IN SILICON

The results of a study carried out on Pd-doped p+ n Si junctions using deep-level transient spectroscopy (DLTS) are reported. Four deep levels associated with Pd at energy positions E(c) - 0.18 eV, E(c) - 0.22 eV, E(c) - 0.37 eV and E(c) - 0.59 eV are observed. These deep levels have been observed simultaneously in the same as-diffused Si: Pd samples for the first time, to the best of our knowledge. Detailed data on the emission rates, capture cross sections and their temperature dependence and deep-level distribution profiles of the palladium-related defects are presented. Isochronal annealing characteristics of these defects have also been studied up to 400-degrees-C yielding some interesting new insights. Our results cast doubts on some of the currently held models for the structure of some of these defects.