(ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS

被引:17
作者
DAHLHAUS, J [1 ]
JUTZI, P [1 ]
FRENCK, HJ [1 ]
KULISCH, W [1 ]
机构
[1] UNIV KASSEL,INST TECH PHYS,W-3500 KASSEL,GERMANY
关键词
D O I
10.1002/adma.19930050510
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Silicon nitride (Si3N4) and silica (SiO2) thin films are of interest for applications in microelectronics and optics. Non-hazardous alternatives to silane (SiH4) as the silicon precursor in the chemical vapor deposition (CVD) of these materials are an attractive target for research. It is shown that pentamethylcyclopentadiene-substituted silanes offer the opportunity to tailor precursors for particular CVD requirements.
引用
收藏
页码:377 / 380
页数:4
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