HYDROGEN PASSIVATION OF INTERFACE DEFECTS IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES

被引：9

作者：

FISCHER, R

PETER, G

GOBEL, EO

CAPIZZI, M

FROVA, A

FISCHER, A

PLOOG, K

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,W-3550 MARBURG,GERMANY

[2] UNIV MARBURG,ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY

[3] UNIV ROME LA SAPIENZA,DIPARTIMENTO FIS,I-00185 ROME,ITALY

[4] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed an increase of overall luminescence intensity and carrier lifetimes of GaAs/AlAs short-period superlattices after exposure of the samples to low-energy hydrogen ion-gun irradiation. We conclude from our data that interface defects which may become important as nonradiative recombination centers in short-period superlattices with only a few monolayers period can be passivated by hydrogen.

引用

页码：2788 / 2790

页数：3

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