LOW-THRESHOLD DISORDER-DEFINED BURIED HETEROSTRUCTURE STRAINED-LAYER ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM WELL LASERS (LAMBDA-APPROXIMATELY 910 NM)

被引:40
作者
MAJOR, JS
GUIDO, LJ
HSIEH, KC
HOLONYAK, N
STUTIUS, W
GAVRILOVIC, P
WILLIAMS, JE
机构
[1] POLAROID CORP,MICROELECTR LAB,CAMBRIDGE,MA 02139
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.100806
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:913 / 915
页数:3
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