ELECTRICAL-PROPERTIES OF BLUE-GREEN DIODE-LASERS

被引：13
作者：
FAN, Y
GRILLO, DC
RINGLE, MD
HAN, J
HE, L
GUNSHOR, RL
SALOKATVE, A
JEON, H
HOVINEN, M
NURMIKKO, AV
HUA, GC
OTSUKA, N
机构：
[1] BROWN UNIV,FAC ENGN,PROVIDENCE,RI 02912
[2] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期
关键词：
D O I：
10.1116/1.587788
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report the implementation of low resistance ohmic contacts to p-type ZnSSe and ZnMgSSe which involves the injection of holes from heavily doped ZnTe into an adjacent alloy layer(s) via graded band gap regions. Temperature-dependent Hall effect measurements on nitrogen-doped Zn(S,Se) and (Zn,Mg)(S,Se) were performed and the activation energy of nitrogen acceptors was obtained. With the use of this graded contact, room-temperature continuous-wave laser diode operation has been achieved at a threshold voltage of 5.8 V in a ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure.
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收藏
页码：2480 / 2483
页数：4
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