LOW-TEMPERATURE ETCHING OF GAAS SUBSTRATES AND IMPROVED MORPHOLOGY OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRISDIMETHYLAMINOARSENIC AND TRIETHYLGALLIUM

被引：21

作者：

MARX, D ^{[1
]}

ASAHI, H ^{[1
]}

LIU, XF ^{[1
]}

HIGASHIWAKI, M ^{[1
]}

VILLAFLOR, AB ^{[1
]}

MIKI, K ^{[1
]}

YAMAMOTO, K ^{[1
]}

GONDO, S ^{[1
]}

SHIMOMURA, S ^{[1
]}

HIYAMIZU, S ^{[1
]}

机构：

[1] OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00895-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metalorganic molecular beam etching of a GaAs surface is observed at temperatures as low as 370 degrees C, for the first time, when the GaAs surface is exposed to TDMAAs (trisdimethylaminoarsenic) only. At this low temperature, not only the oxide layer is removed, but a smoothening of the surface also occurs. At higher temperatures (greater than or equal to 480 degrees C), however, this reaction of GaAs with TDMAAs is responsible for a roughening of the (100) GaAs surface, forming (411)A micro-facets. At low V/III beam pressure ratios (less than or equal to 0.5), smooth surfaces as well as good optical and electrical properties are obtained for GaAs layers grown even at high temperatures (550 less than or equal to T(sub)less than or equal to 650 degrees C). TDMAAs proves to be an extremely efficient arsenic source which can supply enough As even for a small V/III ratio of 0.25, and provides high GaAs growth-rates up to 2 mu m/h for a TDMAAs flux of 0.15 SCCM and TEG of 0.4 SCCM.

引用

页码：551 / 556

页数：6