High performance oxide on SiGe and the interface

被引：0

作者：

Chan, SW ^{[1
]}

Zhao, L ^{[1
]}

Chen, C ^{[1
]}

Li, PW ^{[1
]}

Yang, E ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High resolution transmission electron microscopy was applied to study the interface of Si0.85Ge0.15 and its oxide grown by using an electron-cyclotron-resonance (ECR) oxygen-plasma system The interface is atomically abrupt and nanoscopically smooth, while the oxide layer is uniform in thickness within 5%. There are no pinholes observed. Unlike other oxidation methods, neither the precipitation of Ge nor the massive segregation of Ge are observed. These findings are consistent with the x-ray photo-emission spectroscopy results, electrical measurements and the high quality pMOSFET devices which have been made using the ECR oxide.

引用

页码：491 / 494

页数：4

共 7 条

[1]

LEGROUSE FK, 1989, APPL PHYS LETT, V54, P644

[2] SIGE PMOSFETS WITH GATE OXIDE FABRICATED BY MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING [J].