ELECTRON TRAPS IN ZNSE GROWN BY LIQUID-PHASE EPITAXY

被引：20

作者：

KOSAI, K ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep electron levels in n-type liquid phase epitaxial ZnSe have been investigated using thermally stimulated capacitance, photocapacitance, and deep level transient spectroscopy (DLTS). Electron traps have been observed with activation energies of 0. 17, approximately 0. 3, 0. 64, and 1. 4 ev below the conduction band. The electron emission-rate dependence on temperature as measured by DLTS has been found to vary among samples for the 0. 3 ev level.

引用

页码：1018 / 1022

页数：5

共 22 条

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