EXCITON-INDUCED SQUEEZED STATE OF LIGHT IN SEMICONDUCTORS

被引：19
作者：
AN, NB [1 ]
机构：
[1] INST THEORET PHYS,HANOI 10000,VIETNAM
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.48.11732
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper a mechanism for the generation of a squeezed state of light is theoretically presented. Due to coupling with excitons and via exciton-exciton interaction, a light beam propagating within a finite-size semiconductor sample is shown to evolve into a squeezed state. Based on an effective bosonic Hamiltonian, which is obtained from the original fermionic one, a detailed derivation of the photon quadrature variances is presented and dependences of the photon squeezing on both the extrinsic and intrinsic parameters are analyzed.
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页码：11732 / 11742
页数：11
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