EXCITON-INDUCED SQUEEZED STATE OF LIGHT IN SEMICONDUCTORS

被引：19

作者：

AN, NB ^{[1
]}

机构：

[1] INST THEORET PHYS,HANOI 10000,VIETNAM

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.48.11732

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper a mechanism for the generation of a squeezed state of light is theoretically presented. Due to coupling with excitons and via exciton-exciton interaction, a light beam propagating within a finite-size semiconductor sample is shown to evolve into a squeezed state. Based on an effective bosonic Hamiltonian, which is obtained from the original fermionic one, a detailed derivation of the photon quadrature variances is presented and dependences of the photon squeezing on both the extrinsic and intrinsic parameters are analyzed.

引用

页码：11732 / 11742

页数：11

共 67 条

[1]

ABRAM I, 1991, PHYS WORLD APR, P19

[2]

AGAWAL GS, 1989, PHYS REV A, V39, P2969

[3] LIGHT SQUEEZING VIA EXCITON EXCITON INTERACTION IN SEMICONDUCTORS [J].