PHASE-FORMATION IN SPUTTER-DEPOSITED METAL (V, NB, ZR, Y) OXIDES - RELATIONSHIP TO METAL, METAL-OXYGEN, AND OXYGEN FLUX

被引:27
|
作者
AITA, CR [1 ]
机构
[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期
关键词
D O I
10.1116/1.578502
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It is well documented that an oxide is formed on the surface of a metal target sputtered in an 02-bearing discharge. The sputtered flux will, in general, consist of metal atoms (M) and metal-oxygen molecules (M-0). In this study, a series of metal (M = V, Nb, Y, Zr) targets were sputtered in rare gas-O2 discharges. Films were grown on substrates at low temperatures (70-325-degrees-C). Optical emission spectrometry was used to index the growth environment in terms of (a) the fractional flux of M and M-O species to the growth interface, and (b) the availability of oxygen for reaction at the growth interface. The interrelation of process parameters, phase formation, and the growth environment indices was presented in the form of phase maps. Common features in the phase maps of all systems were identified.
引用
收藏
页码:1540 / 1547
页数:8
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