THE BANDGAP-SELECTIVE PHOTOELECTROCHEMICAL ETCHING OF GAAS/ALXGA1-XAS HETEROSTRUCTURES WITH VARYING MOLE FRACTION

被引：8
|
作者：
KHARE, R
YOUNG, DB
HU, EL
机构：
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara, California
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 07期
关键词：
D O I：
10.1149/1.2220783
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have demonstrated the highly selective removal of low aluminum (Al) mole-fraction AlxGa1-xAs layers from those with higher Al mole-fraction using the wet photoelectrochemical (PEC) etch process. AGaAs/AlxGa1-xAs semiconductor structure with layers of varying Al mole-fraction was examined. The sample was etched in a (1:20) HCl:H2O electrolyte solution. A Ti/sapphire laser was used as the light source to tune the incident photon energy between the various bandgaps of the heterostructure layers. Relative etch rates >10(4):1 and >10(3):1 were found for mole fraction differences in x of 0.15 and 0.05, respectively. The selectivity was examined as a function of incident wavelength.
引用
收藏
页码：L117 / L118
页数：2
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