SOL-GEL ROUTE TO SILICON SUBOXIDES - PREPARATION AND CHARACTERIZATION OF SILICON SESQUIOXIDE

被引：48
|
作者：
BELOT, V [1 ]
CORRIU, RJP [1 ]
LECLERCQ, D [1 ]
LEFEVRE, P [1 ]
MUTIN, PH [1 ]
VIOUX, A [1 ]
FLANK, AM [1 ]
机构：
[1] CTR UNIV PARIS SUD,UTILISA RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 127卷 / 02期
关键词：
D O I：
10.1016/0022-3093(91)90144-U
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The title compound was prepared by sol-gel method from Si2Cl6. NMR, XANES and EXAFS experiments showed silicon sesquioxide as an individual phase in which each silicon atom is bonded to 3 oxygen atoms and 1 silicon atom. Thus, the Si-29 chemical shift was found at - 71 ppm (broad peak), and the XANES spectrum exhibited a characteristic absorption edge at 1840.5 eV. The thermal behavior of SiO1.5 was studied. No separation of phases Si and SiO2 could be observed by heating due to the cleavage of the SiSi bonds by adsorbed H2O.
引用
收藏
页码：207 / 214
页数：8
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