FLUX CREEP, PINNING POTENTIAL AND CRITICAL CURRENT-DENSITY IN BI2SR2CA1CU2OX SINGLE-CRYSTALS

被引:3
作者
NAGANO, Y
FUJII, T
SHIRAFUJI, J
机构
[1] Department of Electrical Engineering, Osaka University, Suita, Osaka
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期
关键词
OXIDE SUPERCONDUCTOR; BI2SR2CA1CU2OX; FLUX CREEP; PINNING POTENTIAL; CRITICAL CURRENT DENSITY;
D O I
10.1143/JJAP.30.L568
中图分类号
O59 [应用物理学];
学科分类号
摘要
Flux creep characteristic at 4.4 K in Bi2Sr2Ca1Cu2O(x) single crystals grown by flux method has been measured as a function of magnetic field applied parallel to the c-axis. The logarithmic relaxation rate of the magnetization dM/d ln t is analyzed on the basis of the flux creep model in combination with an extended Bean's critical state model in which n-th power dependence (0 less-than-or-equal-to n less-than-or-equal-to 1) of critical current density on magnetic field is assumed. The pinning potential and the zero-temperature critical current density are estimated to be 0.014 approximately 0.056 eV and 10(4) approximately 10(5) A/cm2, respectively, depending on oxygen partial pressure of the crystal growth environment.
引用
收藏
页码:L568 / L571
页数:4
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