OXIDE ETCHING USING SURFACE-WAVE COUPLED PLASMA

被引：18

作者：

AKIMOTO, T

IKAWA, E

SANGO, T

KOMACHI, K

KATAYAMA, K

EBATA, T

机构：

[1] NEC CORP LTD,DIV VERY LARGE SCALE INTEGRAT MFG ENGN,SAGAMIHARA,KANAGAWA 229,JAPAN

[2] SUMITOMO MET IND LTD,ADV TECHNOL RES LAB,AMAGASAKI,HYOGO 660,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

DRY ETCHING; HIGH-DENSITY PLASMA; OXIDE ETCHING; WINDOW ETCHING; SELECTIVE ETCHING; SURFACE WAVE COUPLED PLASMA;

D O I：

10.1143/JJAP.33.7037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxide etching was evaluated using a new high-density plasma, which was based on surface wave coupled plasma (SWP). This plasma, applicator can uniformly generate microwave plasma over a large area, and it can be formed without quartz tubes or plates. The plasma characteristics of SWP were investigated at the low-pressure region. At the First stage, oxide etching characteristics were evaluated. The SWP oxide etcher had a high etching rate and achieved quarter-micron window etching of vertical profile.

引用

页码：7037 / 7041

页数：5

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