THE CU/AL2O3/AL(111) INTERFACE - INITIAL FILM GROWTH AND THERMALLY INDUCED DIFFUSION OF COPPER INTO THE BULK

被引：49

作者：

CHEN, JG ^{[1
]}

COLAIANNI, ML ^{[1
]}

WEINBERG, WH ^{[1
]}

YATES, JT ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT CHEM,CTR SURFACE SCI,PITTSBURGH,PA 15260

来源：

SURFACE SCIENCE | 1992年 / 279卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(92)90548-K

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-resolution electron energy loss spectroscopy and Auger electron spectroscopy have been used to investigate the Cu/Al2O3/Al(111) interface at temperatures between 95 and 700 K. The copper overlayer was deposited by in situ evaporation, and the Al2O3 substrate was prepared by controlled oxidation of an atomically clean AI(Ill) surface. It was found that the first monolayer of copper forms a smooth overlayer on the Al2O3/Al(111) substrate at 95 K. Heating the Cu/Al2O3/Al(111) layer causes an inward diffusion of the copper overlayer. The chemisorption of CO on the Cu/Al2O3/Al(111) substrate has been studied also and the results are compared to previous investigations of a Ni/Al2O3/Al(111) interface.

引用

页码：223 / 232

页数：10

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