ORIENTATION DEPENDENCE OF ELECTRON-IRRADIATION DAMAGE IN ZINC-OXIDE

被引：16

作者：

YOSHIIE, T ^{[1
]}

IWANAGA, H ^{[1
]}

SHIBATA, N ^{[1
]}

ICHIHARA, M ^{[1
]}

TAKEUCHI, S ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1979年 / 40卷 / 02期

关键词：

D O I：

10.1080/01418617908243104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The threshold voltage for zinc displacement in ZnO by electron irradiation lias been determined by high–voltage electron microscopy as a function of incident orientation from the [2110] to both the [0001] and [000T] directions. It is found that the threshold voltage is a minimum (∼700kV) in the [2110] direction and a maximum (∼1100kV) in the [0001] and [000T] directions without showing polarity effects. The result is interpreted in terms of the crystal structure of ZnO. © 1979 Taylor & Francis Group, LLC.

引用

页码：297 / 301

页数：5

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