ORIENTATION DEPENDENCE OF ELECTRON-IRRADIATION DAMAGE IN ZINC-OXIDE

被引：16
作者：
YOSHIIE, T [1 ]
IWANAGA, H [1 ]
SHIBATA, N [1 ]
ICHIHARA, M [1 ]
TAKEUCHI, S [1 ]
机构：
[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1979年 / 40卷 / 02期
关键词：
D O I：
10.1080/01418617908243104
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The threshold voltage for zinc displacement in ZnO by electron irradiation lias been determined by high–voltage electron microscopy as a function of incident orientation from the [2110] to both the [0001] and [000T] directions. It is found that the threshold voltage is a minimum (∼700kV) in the [2110] direction and a maximum (∼1100kV) in the [0001] and [000T] directions without showing polarity effects. The result is interpreted in terms of the crystal structure of ZnO. © 1979 Taylor & Francis Group, LLC.
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页码：297 / 301
页数：5
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