TYPES OF ELECTRICAL DOMAIN INSTABILITY IN SEMICONDUCTORS WITH HOT ELECTRONS

被引：0

作者：

BONCH-BRUEVICH, VL

SEREBREN.PS

机构：

来源：

RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR | 1969年 / 14卷 / 09期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1428 / +

页数：1

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[1]

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[2]

BASS FG, 1966, ZH EKSP TEOR FIZ, V50, P102

[3]

BONCH-BRUEVICH VL, 1965, FIZ TVERD TELA+, V7, P15

[4]

BONCHBRUEVICH VL, 1966, FIZ TVERD TELA, V8, P356

[5]

BONCHBRUEVICH VL, 1967, FIZ TEKH POLUPROV, V1, P239

[6]

BONCHBRUYEVICH VL, 1968, THEORY HOT ELECTRONS

[7]

CHYNOWETH AG, 1966, IEEE T ELECTRON DEV, V13, P4

[8]

GUREVICH VL, 1964, ZH EKSP TEOR FIZ, V46, P354

[9] AMPLIFICATION IN 2-VALLEY SEMICONDUCTORS [J].

HAKKI, BW .

[10] THEORY OF GUNN EFFECT [J].

KNIGHT, BW ;

PETERSON, GA .

PHYSICAL REVIEW, 1967, 155 (02) :393-+