COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS

被引：91

作者：

MA, TP ^{[1
]}

SCOGGAN, G ^{[1
]}

LEONE, R ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 02期

关键词：

D O I：

10.1063/1.88366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：61 / 63

页数：3

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