RADIATION ENHANCED DIFFUSION IN SOLID BILAYERS

被引:7
作者
DAJELLO, PCT [1 ]
SCHERER, C [1 ]
机构
[1] UNIV FED RIO GRANDE SUL,INST FIS,BR-91500 PORTO ALEGRE,RS,BRAZIL
关键词
D O I
10.1088/0022-3727/25/12/014
中图分类号
O59 [应用物理学];
学科分类号
摘要
The phenomenon of radiation enhanced diffusion in solid bilayers is described by a set of equations, originally proposed by Dienes and Damask for self diffusion under irradiation. The model is modified in various aspects, taking into account the variations of the properties of the sample during the process. An algorithm to calculate the production rate of point defects for the inhomogeneous sample is presented. A comparison with an experimental result in Fe-Al is made.
引用
收藏
页码:1780 / 1785
页数:6
相关论文
共 24 条
[1]   RADIATION EFFECTS ON SOLID-STATE DIFFUSION [J].
ADDA, Y ;
BEYELER, M ;
BREBEC, G .
THIN SOLID FILMS, 1975, 25 (01) :107-156
[2]   RADIATION-ENHANCED DIFFUSION IN AMORPHOUS NI-ZR ALLOYS [J].
AVERBACK, RS ;
HAHN, H .
PHYSICAL REVIEW B, 1988, 37 (17) :10383-10386
[3]   ION-BEAM MIXING IN PURE AND IN IMMISCIBLE COPPER BILAYER SYSTEMS [J].
AVERBACK, RS ;
PEAK, D ;
THOMPSON, LJ .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (01) :59-64
[4]   NON-STATIONARY RADIATION-ENHANCED DIFFUSION IN METALS - ORDERING IN COLD-WORKED SILVER-ZINC ALLOYS [J].
BYSTROV, LN ;
IVANOV, LI ;
PLATOV, YM .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (02) :375-&
[5]   INFLUENCE OF CHEMICAL DRIVING FORCES IN ION MIXING OF METALLIC BILAYERS [J].
CHENG, YT ;
VANROSSUM, M ;
NICOLET, MA ;
JOHNSON, WL .
APPLIED PHYSICS LETTERS, 1984, 45 (02) :185-187
[6]  
DAJELLO PCT, 1990, THESIS UFRGS PORTO A
[7]   RADIATION ENHANCED DIFFUSION IN SOLIDS [J].
DIENES, GJ ;
DAMASK, AC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1713-1721
[8]   RADIATION-ENHANCED DIFFUSION IN NI/ZR DIFFUSION COUPLES [J].
DING, F ;
AVERBACK, RS ;
HAHN, H .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1785-1790
[9]  
Flynn C. P, 1972, POINT DEFECTS DIFFUS
[10]   ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J].
GIBBONS, JF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :295-+