DECOMPOSITION OF NH3 ON SI(100) - A SSIMS STUDY

被引:34
作者
ZHOU, XL
FLORES, CR
WHITE, JM
机构
[1] Department of Chemistry and Biochemistry, University of Texas, Austin
关键词
D O I
10.1016/0039-6028(92)90933-W
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The decomposition of NH3 on Si(100) has been studied using static secondary ion mass spectroscopy (SSIMS). Adsorption of NH3 on Si(100) at 100 K is dissociative and produces NH2(a) and H(a). Although slow thermal decomposition of NH2(a) to N(a) and H(a) occurs even at 320 K, most NH2(a) is stable up to 630 K. It decomposes rapidly between 630 and 730 K with an activation energy of 30 +/- 4 kcal/mol and a pre-exponential factor of 4 x 10(8 +/- 1) s-1. There is no evidence for NH(a). A small fraction of NH2(a) recombines with H(a) at 685 K, liberating NH3(g). H(a) desorbs as H-2 at 800 K and N(a) diffuses into the bulk of Si(100) above 750 K.
引用
收藏
页码:L267 / L273
页数:7
相关论文
共 51 条
[1]   THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J].
AVOURIS, P ;
BOZSO, F ;
HAMERS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1387-1392
[2]   ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].
AVOURIS, P ;
WOLKOW, R .
PHYSICAL REVIEW B, 1989, 39 (08) :5091-5100
[3]  
AVOURIS P, 1988, MATER RES S P, V105, P35
[4]   NH3 ADSORPTION AND DISSOCIATION ON A STEPPED FE(S)(100) SURFACE [J].
BENNDORF, C ;
MADEY, TE ;
JOHNSON, AL .
SURFACE SCIENCE, 1987, 187 (2-3) :434-444
[5]   ADSORPTION AND ORIENTATION OF NH3 ON RU(001) [J].
BENNDORF, C ;
MADEY, TE .
SURFACE SCIENCE, 1983, 135 (1-3) :164-183
[6]   LOW-TEMPERATURE NITRIDATION AND HYDROGENATION OF SI FILMS WITH NH3 - A PHOTOEMISSION-STUDY [J].
BISCHOFF, JL ;
KUBLER, L ;
BOLMONT, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1407-1410
[7]   THERMAL NITRIDATION OF SI(100)-2X1 SURFACE BY NH3 - XPS RESULTS [J].
BISCHOFF, JL ;
KUBLER, L ;
BOLMONT, D .
SURFACE SCIENCE, 1989, 209 (1-2) :115-130
[8]   COMPARATIVE PHOTOEMISSION-STUDY OF THE ADSORPTION OF NO2, N2O, AND NH3 ON ALPHA-SI SURFACES AT LOW-TEMPERATURE [J].
BISCHOFF, JL ;
KUBLER, L ;
BOLMONT, D .
PHYSICAL REVIEW B, 1989, 39 (06) :3653-3658
[9]   UPS DIFFERENTIATION BETWEEN MOLECULAR NH3 AND PARTIALLY DISSOCIATED NH2 FRAGMENTS ADSORBED AT LOW-TEMPERATURE ON SI(001) SURFACES [J].
BISCHOFF, JL ;
LUTZ, F ;
BOLMONT, D ;
KUBLER, L .
SURFACE SCIENCE, 1991, 248 (1-2) :L240-L244
[10]   USE OF MULTILAYER TECHNIQUES FOR XPS IDENTIFICATION OF VARIOUS NITROGEN ENVIRONMENTS IN THE SI/NH3 SYSTEM [J].
BISCHOFF, JL ;
LUTZ, F ;
BOLMONT, D ;
KUBLER, L .
SURFACE SCIENCE, 1991, 251 :170-174