INFLUENCE OF MONOMOLECULAR STEPS ON THE 1ST-ORDER STRUCTURE TRANSITION OF AN INAS(001) SURFACE

被引:32
作者
YAMAGUCHI, H
HORIKOSHI, Y
机构
[1] NTT Basic Research Laboratories, Musashino-shi
关键词
D O I
10.1103/PhysRevLett.70.1299
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The surface stoichiometry transition from As-covered 2x4 to In-covered 4x2 on InAs(001) misoriented surface is studied by reflection high-energy electron diffraction. The width of the hysteresis due to the first-order phase transition between these two structures is smaller with a surface misoriented toward the [110BAR] direction than that with an exactly oriented surface. The results from Monte Carlo simulation indicate that this phenomenon can be explained by the finite size effect on the first-order surface stoichiometry transition caused by the existence of monomolecular steps.
引用
收藏
页码:1299 / 1302
页数:4
相关论文
共 19 条
  • [1] Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397
  • [2] CLEAVED SI(111) SURFACES - GEOMETRICAL AND ANNEALING BEHAVIOR
    AUER, PP
    MONCH, W
    [J]. SURFACE SCIENCE, 1979, 80 (01) : 45 - 55
  • [3] Barber M. N., 1983, PHASE TRANSITIONS CR, V8
  • [4] BENARD J, 1983, ADSORPTION METAL SUR, pCH3
  • [5] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
    BIEGELSEN, DK
    BRINGANS, RD
    NORTHRUP, JE
    SWARTZ, LE
    [J]. PHYSICAL REVIEW B, 1990, 41 (09): : 5701 - 5706
  • [6] Binder K., 1986, MONTE CARLO METHODS
  • [7] Chang L.L., 1985, MOL BEAM EPITAXY HET
  • [8] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES
    DRATHEN, P
    RANKE, W
    JACOBI, K
    [J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166
  • [9] HENZLER M, 1977, ELECTRON SPECTROSCOP
  • [10] OBSERVATION OF SURFACE RECONSTRUCTION ON SILICON ABOVE 800-DEGREES-C USING THE STM
    KITAMURA, S
    SATO, T
    IWATSUKI, M
    [J]. NATURE, 1991, 351 (6323) : 215 - 217