CALCULATION OF F+ CENTER IN THE CUO2 PLANE OF HTSC

被引：4

作者：

RUBIN, P

KRISTOFFEL, N

机构：

[1] Institute of Physics, Estonian Academy of Sciences

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 87卷 / 12期

关键词：

D O I：

10.1016/0038-1098(93)90813-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By using the Green's function method the electronic state of the CuO2 plane of a high-T(c) oxide superconductor with one O2- vacancy and one additional electron has been investigated. The basis contains a vacancy-centred s-type function. Account is taken of charge transfer to the neighbours. The energy of localized states between the top of O-valence band and upper Hubbard component is obtained as a function of sp resonance integral. The F+ centre ground state is stable.

引用

页码：1121 / 1123

页数：3