CALCULATION OF F+ CENTER IN THE CUO2 PLANE OF HTSC

被引：4
|
作者：
RUBIN, P
KRISTOFFEL, N
机构：
[1] Institute of Physics, Estonian Academy of Sciences
来源：
SOLID STATE COMMUNICATIONS | 1993年 / 87卷 / 12期
关键词：
D O I：
10.1016/0038-1098(93)90813-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
By using the Green's function method the electronic state of the CuO2 plane of a high-T(c) oxide superconductor with one O2- vacancy and one additional electron has been investigated. The basis contains a vacancy-centred s-type function. Account is taken of charge transfer to the neighbours. The energy of localized states between the top of O-valence band and upper Hubbard component is obtained as a function of sp resonance integral. The F+ centre ground state is stable.
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收藏
页码：1121 / 1123
页数：3
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