IN0.35GA0.65P LIGHT-EMITTING-DIODES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：8
作者：
MASSELINK, WT
ZACHAU, M
机构：
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期
关键词：
D O I：
10.1063/1.107668
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In0.35Ga0.65P. This alloy is close to that with the largest direct band gap in the InyGa1-yP system and has lattice mismatch from the GaAs substrate of 1%. Specularly smooth surface morphology is obtained in this gas-source MBE material through the use of a unique strained-layer-superlattice buffer. Diodes exhibit good rectification and good reverse breakdown characteristics.
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页码：58 / 60
页数：3
相关论文
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[11]  
VALSTER A, 1991, 1991 P QUANT OPT TOP, P126
[12]   LUMINESCENCE AND RAMAN MEASUREMENTS OF INYGA1-YP (0.3-LESS-THAN-Y-LESS-THAN-0.5) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
ZACHAU, M ;
MASSELINK, WT .
APPLIED PHYSICS LETTERS, 1992, 60 (17) :2098-2100
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