IN0.35GA0.65P LIGHT-EMITTING-DIODES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：8

作者：

MASSELINK, WT

ZACHAU, M

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In0.35Ga0.65P. This alloy is close to that with the largest direct band gap in the InyGa1-yP system and has lattice mismatch from the GaAs substrate of 1%. Specularly smooth surface morphology is obtained in this gas-source MBE material through the use of a unique strained-layer-superlattice buffer. Diodes exhibit good rectification and good reverse breakdown characteristics.

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页码：58 / 60

页数：3

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