PHYSICS FOR MODELS OF GALLIUM-ARSENIDE DEVICES

被引：0
|
作者：
BENNETT, HS [1 ]
LOWNEY, JR [1 ]
机构：
[1] NBS,DIV SEMICOND ELECTR,GAITHERSBURG,MD 20899
来源：
COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1987年 / 6卷 / 01期
关键词：
D O I：
10.1108/eb010298
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
引用
收藏
页码：31 / 36
页数：6
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