CARRIER TRANSPORT IN THIN SILICON FILMS

被引:35
作者
DUMIN, DJ
ROBINSON, PH
机构
关键词
D O I
10.1063/1.1656668
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2759 / &
相关论文
共 24 条
[1]   EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J].
BICKNELL, RW ;
JOYCE, BA ;
NEAVE, JH ;
SMITH, GV .
PHILOSOPHICAL MAGAZINE, 1966, 14 (127) :31-&
[2]   EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J].
BICKNELL, RW ;
STIRLAND, DJ ;
CHARIG, JM ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1964, 9 (102) :965-&
[3]   ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].
DUMIN, DJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1909-&
[4]   MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE [J].
DUMIN, DJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) :1107-&
[5]   AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].
DUMIN, DJ ;
ROBINSON, PH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) :469-+
[6]   A1 REDISTRIBUTION IN THERMALLY OXIDIZED SI SURFACE [J].
EDAGAWA, H ;
MORITA, Y ;
INUISHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (03) :460-&
[8]   SURFACE TRANSPORT THEORY [J].
GREENE, RF .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :291-298
[9]   SURFACE TRANSPORT IN SEMICONDUCTORS [J].
GREENE, RF ;
FRANKL, DR ;
ZEMEL, J .
PHYSICAL REVIEW, 1960, 118 (04) :967-975
[10]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&