ELECTRONIC PROPERTIES OF NB3GE AND NB3AL FROM SELF-CONSISTENT PSEUDOPOTENTIALS .1. BAND-STRUCTURE AND DENSITY OF STATES

被引:87
作者
PICKETT, WE
HO, KM
COHEN, ML
机构
[1] UNIV CALIF BERKELEY,DIV MAT & MOLEC RES,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 04期
关键词
D O I
10.1103/PhysRevB.19.1734
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The self-consistent-pseudopotential method is applied to the A-15 compounds Nb3Ge and Nb3Al. The Fermi energy is found to lie in a region of very flat bands having a bonding character along the Nb chains. Comparison with the band structures of the (nonexistent) A-15 materials Nb3Nb and Nb3 (chains only) suggest that the p states on the Ge and Al atoms are instrumental in determining the position of the Fermi level. There is little evidence for rigid-band behavior in the Nb3AlxGe1-x system. Studies of the effects of chain dimerization in Nb3Ge suggest that states at R and M are more likely candidates to participate in structural transitions than states at or X. © 1979 The American Physical Society.
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页码:1734 / 1750
页数:17
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