A NEW APPROACH TO THE CORRELATION OF THE ELECTRICAL-PROPERTIES WITH INTERBAND AND INTRABAND TRANSITIONS OF THIN CR FILMS

被引：6
作者：
FOUAD, SS
AMMAR, AH
ELFAZARY, MH
机构：
[1] Faculty of Education, Ain Shams University, Cairo
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1995年 / 187卷 / 01期
关键词：
D O I：
10.1002/pssb.2221870109
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Thin chromium films of thickness ranging from 25 to 80 nm are prepared by thermal evaporation under a vacuum of 1.33 x 10(-3) Pa. The electrical resistivity was inversely proportional to the thickness of the film. The analysis of the electrical resistivity is treated in the frame of the effective mean free path theory of size effect developed by Pichard et al. Such analysis allows the determination of the mean free path l(o), carrier concentration n(c), relaxation time tau, and Fermi energy E(F). The optical constants, n and k, of chromium thin films are determined in the spectral range of 200 to 25000 nm. The obtained results agree with the optical conductivities predicted theoretically by Moruzzi et al. In addition, the values of n(c), sigma(s), l(o), and tau obtained electrically are found to match with those obtained optically.
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页码：99 / 108
页数：10
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