A STEADY-STATE POTENTIAL FLOW MODEL FOR SEMICONDUCTORS

被引:89
作者
DEGOND, P
MARKOWICH, PA
机构
[1] ECOLE POLYTECH,CTR MATH APPL,F-91128 PALAISEAU,FRANCE
[2] TECH UNIV BERLIN,FACHBEREICH MATH,W-1000 BERLIN 12,GERMANY
来源
ANNALI DI MATEMATICA PURA ED APPLICATA | 1993年 / 165卷
关键词
D O I
10.1007/BF01765842
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
We present a three-dimensional steady state irrotational flow model for semiconductors which is based on the hydrodynamic equations. We prove existence and local uniqueness of smooth solutions under a smallness assumptions on the data. This assumption implies subsonic flow of electrons in the semiconductors device.
引用
收藏
页码:87 / 98
页数:12
相关论文
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Courant R., 1967, SUPERSONIC FLOW SHOC
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DEGOND P, 1990, ANAL DARWIN MODEL AP
[3]  
DEGOND P, 1989, IN PRESS APPL MATH L
[4]  
GILBARG D, 1984, ELLIPTIC PARTIAL DIF
[5]  
Glowinski R., 1984, NUMERICAL METHODS NO
[6]  
MARKOWICH PA, 1986, STEADY STATE SEMICON
[7]  
MNARKOWICH PA, 1990, SEMICONDUCTOR EQUATI
[8]  
Selberherr S., 1984, ANAL SIMULATION SEMI