ANISOTROPY OF ELECTRICAL-RESISTIVITY AND THERMAL-EXPANSION OF SINGLE-CRYSTAL TI5SI3

被引：63
|
作者：
NAKASHIMA, T
UMAKOSHI, Y
机构：
[1] Department of Materials Science and Engineering, Osaka University, Osaka
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1992年 / 66卷 / 06期
关键词：
D O I：
10.1080/09500839208219052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The anisotropies of electrical resistivity and thermal expansion of single-crystal Ti5Si3 have been measured in the temperature ranges 4-2-300 K and 300-1273 K respectively. The anisotropy of the thermal component of the resistivity, defined as rho(273 K)-rho(4.2 K), was found to be 1-65 and the anisotropy of the thermal expansion 2.7 at 1273 K. The anisotropies are discussed on the basis of the directionality of the bonding forces.
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页码：317 / 321
页数：5
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