EFFECT OF UNIAXIAL-STRESS ON SI (100) INVERSION-LAYERS

被引：0

作者：

KASTALSKY, A ^{[1
]}

FANG, FF ^{[1
]}

机构：

[1] IBM,YORKTOWN HTS,NY

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：316 / 316

页数：1

共 50 条

[1] EFFECTS OF UNIAXIAL-STRESS ON THE CYCLOTRON-RESONANCE IN INVERSION-LAYERS ON SI(100)
ABSTREITER, G
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SURFACE SCIENCE, 1980, 98 (1-3) : 413 - 415
[2] THEORY OF CYCLOTRON-RESONANCE IN SI(100) INVERSION-LAYERS UNDER [001] UNIAXIAL-STRESS
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[3] EFFECT OF BIAXIAL STRESS ON SI(100) INVERSION-LAYERS
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[4] EFFECTS OF UNIAXIAL-STRESS ON THE CYCLOTRON-RESONANCE IN INVERSION LAYERS ON SI(100)
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[5] THEORY OF CYCLOTRON-RESONANCE FOR ELECTRONS IN SI SURFACE INVERSION-LAYERS UNDER A UNIAXIAL-STRESS
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[6] SUBBAND ENERGIES IN (100) - SILICON INVERSION LAYERS U1 UNIAXIAL-STRESS
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[7] DETERMINATION OF VALLEY SPLITTING IN (100) SI INVERSION-LAYERS
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[8] EFFECT OF SUBBAND SPLITTING ON SI INVERSION-LAYERS
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[9] ELECTRON MAGNETOTRANSPORT IN UNIAXIALLY STRESSED SI(100) INVERSION-LAYERS
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[10] NEGATIVE MAGNETORESISTANCE IN UNIAXIALLY STRESSED SI(100) INVERSION-LAYERS
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