ELECTRONIC PROCESSES IN METAL-SILICON NITRIDE SILICON DIOXIDE SILICON SYSTEMS

被引：12

作者：

KOBAYASHI, K

OHTA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1972年 / 11卷 / 04期

关键词：

D O I：

10.1143/JJAP.11.538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：538 / +

页数：1

共 14 条

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[5] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

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LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[6] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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SAH, CT .

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[7]

HIELSCHER PH, 1969, SOLID STATE ELECTRON, V12, P527

[8]

KASHAVAN BV, 1969, APPL PHYS LETT, V14, P45

[9]

KOBAYASHI K, 1971, JPN J APPL PHYS, V11, P555

[10]

KOBAYASHI K, 1969, BUSSEI, V10, P537

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