ANALYSIS OF ELECTRIC-FIELD EFFECT IN QUANTUM BOX STRUCTURE AND ITS APPLICATION TO LOW-LOSS INTERSECTIONAL TYPE OPTICAL SWITCH

被引：15
|
作者：
RAVIKUMAR, KG
AIZAWA, T
MATSUBARA, K
ASADA, M
SUEMATSU, Y
机构：
[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
[2] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1991年 / 9卷 / 10期
关键词：
D O I：
10.1109/50.90936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electric field induced refractive-index variation and the refractive-index variation-absorption loss variation ratio alpha-pBAR in a GaInAs/InP quantum box (QB) structure have been analyzed and applied to an intersectional type optical switch. The large index variation of a few percent with low absorption characteristics in QB structure, i.e., large alpha-pBAR ( > 10) in low fundamental absorption region, is found to be very useful to decrease the insertion loss at both the ON and OFF state of a QB intersectional type optical switch. It is shown that in such a switch the loss can be decreased to less than 1 dB. Moreover, the QB size dependence as well as fluctuations in QB size on QB-intersectional type optical switch was also discussed.
引用
收藏
页码：1376 / 1385
页数：10
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