DESORPTION OF THE EXCESS GALLIUM ATOMS AT THE SURFACE OF GALLIUM-ARSENIDE AND APPLICATION TO ATOMIC LAYER EPITAXY

被引：20
作者：
SUGIYAMA, NH
ISU, T
KATAYAMA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 02期
关键词：
D O I：
10.1143/JJAP.28.L287
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L287 / L289
页数：3
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